2sk4094 no. a0523-1/5 features ? on-resistance r ds (on)1=3.8m (typ.) ? input capacitance ciss=12500pf (typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d 100 a drain current (pulse) i dp pw 10 s, duty cycle 1% 400 a allowable power dissipation p d 1.75 w tc=25 c90w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 850 mj avalanche current *2 i av 70 a note : * 1 v dd =30v, l=200 h, i av =70a (fig.1) * 2 l 200 h, single pulse package dimensions unit : mm (typ) 7536-001 12512 tkim tc-00002699/n0806qa syim tc-00000295 sanyo semiconductors data sheet 2sk4094 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : ena0523a product & package information ? package : to-220-3l ? jeita, jedec : sc-46, to-220ab ? minimum packing quantity : 50 pcs./magazine marking electrical connection 1 3 2 1 : gate 2 : drain 3 : source sanyo : to-220-3l 10.0 (0.6) (1.7) 1.27 1.52 0.8 2.54 2.54 13.08 15.7 2.8 13.3 2.4 9.2 3.0 1.3 4.5 1.3 8.9 max 0.5 1 23 3.6 k4094 lot no.
2sk4094 no. a0523-2/5 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 60 v zero-gate voltage drain current i dss v ds = 60 v, v gs =0v 1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance | yfs | v ds =10v, i d = 50 a 45 75 s static drain-to-source on-state resistance r ds (on)1 i d = 50 a, v gs =10v 3.8 5.0 m r ds (on)2 i d = 50 a, v gs =4v 4.9 7.0 m input capacitance ciss v ds =20v, f=1mhz 12500 pf output capacitance coss 1200 pf reverse transfer capacitance crss 950 pf turn-on delay time t d (on) see fig.2 80 ns rise time t r 630 ns turn-off delay time t d (off) 860 ns fall time t f 750 ns total gate charge qg v ds =30v, v gs =10v, i d =100a 220 nc gate-to-source charge qgs 30 nc gate-to-drain ?miller? charge qgd 55 nc diode forward voltage v sd i s =100a, v gs =0v 1.0 1.2 v fig.1 avalanche resistance test circuit fig.2 switching time test circuit 50 10v 0v 50 v dd l 2sk4094 pw=10 s d.c. 1% p. g 50 g s d i d =50a r l =0.6 v dd =30v v out 2sk4094 v in 10v 0v v in i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a it11430 75 c 25 c tc= --25 c 0.2 0.6 0.4 0.8 1.0 1.2 1.4 2.0 1.6 1.8 0 0 20 40 200 120 100 80 160 140 180 60 it11431 0.5 1.5 2.0 1.0 2.5 4.5 3.5 3.0 4.0 0 0 20 60 40 200 140 120 100 160 180 80 tc=25 c single pulse v gs =3v 10v 4v 6v v ds =10v single pulse --25 c 25 c tc=75 c 8v
2sk4094 no. a0523-3/5 r ds (on) -- v gs r ds (on) -- tc ciss, coss, crss -- v ds i s -- v sd | y fs | -- i d sw time -- i d gate-to-source voltage, v gs -- v case temperature, tc -- c forward transfer admittance, | y fs | -- s static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a 030 10 15 20 25 5 1k 3 5 2 it10474 10k 2 3 5 7 7 ciss crss it10473 0.1 7 1.0 23 5 2 7 10 35 2 100 1000 3 2 3 5 2 5 7 7 t d (off) t d (on) v dd =30v v gs =10v f=1mhz t r t f co ss 7 100 35 it11559 --50 --25 150 it11435 it11434 0.1 1.0 23 57 3 1.0 10 7 1.4 1.2 1.0 0.8 0.4 0.2 0.6 0 0.01 0.1 5 7 3 2 2 1.0 5 7 3 2 10 5 7 3 2 100 5 7 3 2 3 7 5 2 2 3 2 3 100 7 5 2 10 357 2 100 357 0 25 50 75 100 125 i d =50a single pulse single pulse tc=75 c 25 c --25 c tc= --25 c 25 c 75 c v ds =10v single pulse tc= 75 c 25 c --25 c v gs =0v single pulse 0 2 4 20 12 10 8 16 14 18 6 it11558 13 2 4567 10 89 0 1 2 10 6 5 4 8 7 9 3 v gs =4v, i d =50a v gs =10v, i d =50a it10475 0 50 200 150 250 100 0 2 4 6 1 3 5 8 7 9 10 v ds =30v i d =100a v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v i dp =400a i d =100a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). 10 s 10 s it10960 0.1 1.0 2 3 5 7 2 10 3 5 7 2 0.1 1.0 23 57 2 10 357 2 100 357 100 3 5 7 2 1000 3 5 7 a s o drain-to-source voltage, v ds -- v drain current, i d -- a tc=25 c single pulse
2sk4094 no. a0523-4/5 p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c it11439 0 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 1.75 0.5 it11548 0 0 20 40 60 80 100 120 100 140 160 40 60 50 70 80 90 30 20 10 it10483 p d -- tc case temperature, tc -- c allowable power dissipation, p d -- w
2sk4094 no. a0523-5/5 ps this catalog provides information as of january, 2012. speci cations and information herein are subject to change without notice. note on usage : since the 2sk4094 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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